MMRF1014NT1

suntopsemi
Manufacturer
NXP
Product Number
MMRF1014NT1
Description
The MMRF1014NT1 is a Class A/AB RF power MOSFET launched by NXP Semiconductors, specifically designed for high-frequency power amplification scenarios.
Inventory
54000
Datasheet
MMRF1014NT1.pdf
Delivery
Payment
  • Product Overview

    The MMRF1014NT1 is a Class A/AB RF power MOSFET launched by NXP Semiconductors, specifically designed for high-frequency power amplification scenarios. It operates in the frequency range of 1-2000MHz with a 28V supply voltage and delivers 4W PEP output power, featuring the core advantages of high gain, high efficiency, and high stability. Integrated with on-chip RF feedback and ESD protection, this device supports analog/digital modulation and multicarrier amplification requirements, complies with RoHS standards, and serves as an ideal core component for L-band and broadband RF communication systems .

    Key Features

    • Broadband Stable Operation: Built-in on-chip RF feedback circuit enables stable amplification within 1-2000MHz broadband frequency range, suitable for multi-band RF systems
    • High-Efficiency Power Output: Achieves 33% drain efficiency at both 900MHz and 1960MHz bands; provides power gain of 19dB/18dB respectively at 4W PEP output, balancing performance and energy consumption
    • Strong VSWR Tolerance: Withstands 5:1 VSWR under 28Vdc, 1960MHz, and 4W CW output conditions, improving reliability in complex working environments
    • Integrated Protection Design: Embedded ESD protection module and large-signal equivalent impedance parameters reduce the design difficulty of peripheral circuits
    • Environmental Compliance: RoHS-compliant and available in tape-and-reel packaging, compatible with automated production line assembly

    Technical Specifications

    Specification ParameterValue/Description
    Operating Frequency Range1-2000MHz
    Supply Voltage28Vdc
    Quiescent Drain Current (IDQ)50mA
    Maximum Output Power (PEP)4W
    Power Gain @ 900MHz19dB
    Power Gain @ 1960MHz18dB
    Drain Efficiency33% (@900MHz/1960MHz)
    Intermodulation Distortion (IMD)-39dBc (@900MHz)/-34dBc (@1960MHz)
    Thermal Resistance8.8℃/W
    Package TypePLD-1.5 (SOT1811-1, 3 pins)
    Core ProtectionIntegrated ESD Protection
    Compliance StandardRoHS Certified

    Typical Applications

    • Civil Broadband Communication Base Stations: In the power amplification module of L-band wireless communication base stations, MMRF1014NT1 can realize high-efficiency amplification of multi-carrier signals. The 19dB high gain reduces the pressure on the front-stage driver, and the 33% efficiency lowers the energy consumption of the base station. Meanwhile, the 5:1 VSWR tolerance ensures stable operation in complex signal environments.
    • Professional RF Test Equipment: For RF signal generators, power testers and other instruments, the device's 1-2000MHz broadband characteristic can cover multi-band test requirements. The accurate large-signal impedance parameters improve the accuracy of test data, and the integrated protection design extends the service life of the equipment.
    • Aerospace RF Links: In the RF front-end of aerospace communication and navigation systems, 28V wide voltage is compatible with airborne power supply, on-chip RF feedback ensures stable broadband signal transmission, 4W output power can meet the signal strength requirements of long-distance communication, and RoHS compliance also meets the environmental standards of aerospace devices.
    • Digital Modulation Amplification Systems: For TDMA, CDMA and other digital modulation communication equipment, the low intermodulation distortion (minimum -39dBc) of MMRF1014NT1 can reduce signal interference, and the multi-carrier compatibility adapts to complex modulation formats, helping to improve the signal-to-noise ratio of the communication link.

    Why Choose MMRF1014NT1 ?

    • Broadband Coverage Advantage: Full-band compatibility of 1-2000MHz eliminates the need for separate selection for different frequency bands, reducing system design and material management costs
    • Cost-Effective Performance: The combination of 33% drain efficiency and 18-19dB high gain has outstanding energy efficiency ratio among 4W-level RF devices, reducing the investment in heat dissipation modules
    • High Reliability Design: 5:1 VSWR tolerance and ESD protection significantly reduce the device damage rate under extreme working conditions and improve the overall yield of equipment
    • Simplified Development Process: Provides large-signal equivalent impedance parameters and built-in RF feedback, shortening the R&D cycle of peripheral matching circuits and accelerating product mass production
    • Supply Chain Compatibility: Tape-and-reel packaging is compatible with automated production lines, and the packaging specification of 1000pcs/reel meets the needs of bulk procurement and ensures delivery stability

    SUNTOP COMPANY INTRODUCTION

    Founded in 2000, Suntop is one of the leading global distributors of electronic components, dedica ted to providing comprehensive procurement and supply chain services to the global electronics manufacturing industry. Our services include distribution, spot trading, PPV cost-saving projects, and inventory management. We not only offer high-quality products but also strive to assist our clients in achieving optimal solutions with minimal time and cost.
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  • +
    1. What are the core performance data of MMRF1014NT1 at 900MHz? >
    Under 28Vdc and IDQ=50mA conditions, the power gain is 19dB, drain efficiency is 33%, and intermodulation distortion is as low as -39dBc at 4W PEP output, meeting the high-fidelity amplification requirements of the mid-frequency band .
    +
    2. What is the maximum VSWR that the device can withstand? >
    It can stably withstand 5:1 VSWR under 28Vdc, 1960MHz, and 4W CW output power conditions, which is much higher than the tolerance threshold of conventional RF devices and suitable for complex antenna environments .
    +
    3. What is the thermal resistance parameter of MMRF1014NT1 and what are the requirements for heat dissipation design? >
    The thermal resistance of the device is 8.8℃/W. At 4W full power output, if the ambient temperature is 25℃, the junction temperature of the device is about 25+4×8.8=59.2℃, and conventional aluminum substrate heat dissipation can meet the requirements .
    +
    4. What is the package size of the device? >
    It adopts PLD-1.5 (SOT1811-1) package with dimensions of 6.2×7.0×1.74mm, pin pitch of 7.09mm, and 3-pin design suitable for miniaturized RF module integration .
  • Packaging data

    Packaging Type Tape Width Reel Size Quantity per Reel Package Model
    Automated Tape & Reel 16mm 7-inch 1000pcs SOT1811-1 (PLD-1.5)
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