The 2N5157 is an NPN high-power silicon transistor developed by Microsemi, strictly compliant with the MIL-PRF-19500/371 military standard certification, designed specifically for high-voltage and high-power scenarios. This transistor features a maximum collector-emitter voltage (VCEO) of 500Vdc, a collector-base voltage (VCBO) of 700Vdc, and a maximum collector current (IC) of 3.5Adc. Packaged in TO-3 (TO-204AA), it can operate stably within an ultra-wide temperature range of -65℃ to +200℃. As a high-reliability 2N5157 high-power transistor, its total power dissipation reaches 100W at a case temperature (TC) of 75℃, making it widely suitable for fields with strict performance and stability requirements such as industrial control, power supply equipment, and military electronics, and serving as a preferred solution for high-voltage and high-power applications.
Key Features
Ultra-High Voltage Withstand: The 2N5157 has a maximum collector-emitter voltage (VCEO) of 500Vdc and a collector-base voltage (VCBO) of 700Vdc, far exceeding ordinary transistors. It can safely handle 500V-level high-voltage circuits and avoid the risk of voltage breakdown;
High-Power Carrying Capacity: At a case temperature (TC) of 75℃, the total power dissipation (PT) of the 2N5157 is up to 100W, and 5.0W at room temperature (TA=25℃). Combined with a junction-to-case thermal resistance (RθJC) of 1.25℃/W, it has high heat conduction efficiency, meeting the long-term operation needs of high-power equipment;
Ultra-Wide Temperature Stable Operation: The 2N5157 has an operating and storage temperature range covering -65℃ to +200℃, adaptable to extreme scenarios such as cold outdoor environments, high-temperature industrial workshops, and harsh military environments, without the need for additional temperature control design;
High Current Driving Performance: With a maximum collector current (IC) of 3.5Adc and a maximum base current (IB) of 2.0Adc, it can effectively drive medium and high-power loads (such as motors and power modules) and adapt to various high-current applications;
Military-Grade Reliability: Strictly certified by the MIL-PRF-19500/371 military standard, it has undergone rigorous tests such as high temperature, low temperature, vibration, and shock, and maintains stable performance under harsh working conditions, suitable for high-precision fields such as military and medical care.
Technical Specifications
Technical Parameter
Symbol
Value
Unit
Transistor Type
-
NPN High-Power Silicon Transistor
-
Maximum Collector-Emitter Voltage
VCEO
500
Vdc
Maximum Collector-Base Voltage
VCBO
700
Vdc
Maximum Collector Current
IC
3.5
Adc
Maximum Base Current
IB
2.0
Adc
Total Power Dissipation (TA=25℃)
PT (TA=25℃)
5.0
W
Total Power Dissipation (TC=75℃)
PT (TC=75℃)
100
W
Operating/Storage Temperature Range
Tj, Tstg
-65~+200
℃
Forward Current Transfer Ratio (IC=1.0Adc, VCE=5.0Vdc)
hFE
30~90
-
Turn-On Time (VCC=125Vdc, IC=1.0Adc)
ton
0.8
μs
Turn-Off Time (VCC=125Vdc, IC=1.0Adc)
toff
1.7
μs
Junction-to-Case Thermal Resistance
RθJC
1.25
℃/W
Package Type
-
TO-3 (TO-204AA)
-
Typical Applications
High-Power Switching Circuits in Industrial Control: In scenarios such as industrial motor drives and relay control, the 2N5157 can stably drive medium and high-power loads with its 3.5Adc high current driving capability and 500Vdc high voltage withstand. Its wide temperature range of -65℃ to +200℃ can adapt to temperature fluctuations in industrial workshops, ensuring continuous trouble-free operation of equipment, which is the core application direction of the 2N5157 in the industrial field.
High-Voltage Switching Power Supply Equipment: Switching power supplies need to withstand high input voltages. The 2N5157’s VCBO=700Vdc and VCEO=500Vdc can meet high-voltage requirements, and its 100W power dissipation capability supports high-power conversion of power modules, effectively improving power efficiency, suitable for the design of 500V-level high-voltage switching power supplies.
Military Electronic Equipment: Certified by the MIL-PRF-19500/371 military standard, the 2N5157 can be applied to scenarios such as military communication equipment and radar systems. Its wide temperature characteristics and high reliability can cope with harsh battlefield conditions such as extreme temperatures and vibrations, providing stable transistor performance support for military equipment.
Power Modules in Medical Equipment: Medical equipment (such as X-ray machines and extracorporeal lithotripters) has extremely high requirements for component reliability. The military-grade quality and stable current/voltage parameters of the 2N5157 can ensure the safe operation of power modules, avoiding the impact of component failures on the diagnosis and treatment process and ensuring the stability of medical equipment.
High-Voltage Systems in Automotive Electronics: In modules such as on-board high-voltage power conversion and motor controllers of new energy vehicles, the 500Vdc high voltage withstand of the 2N5157 can cope with the high-voltage circuit environment of automobiles. Its 3.5Adc current capability supports on-board load driving, and its wide temperature characteristics adapt to high and low temperature working conditions during vehicle driving, improving the reliability of on-board systems.
Why Choose 2N5157 ?
Significant High-Voltage Advantage: Compared with the 2N3902 (VCEO=400Vdc) in the same series, the 2N5157’s VCEO is increased to 500Vdc, making it more suitable for 500V-level high-voltage applications, reducing the risk of voltage breakdown and expanding the adaptation range of high-voltage scenarios;
Stronger Power Performance: The total power dissipation of 100W@TC=75℃ is far higher than 5W at room temperature. Combined with low junction-to-case thermal resistance, heat management is more efficient, meeting the long-term operation needs of high-power density equipment and avoiding transistor damage due to overheating;
Wide Environmental Adaptability: The ultra-wide temperature range of -65℃ to +200℃ covers most extreme environments, without the need for additional temperature control circuit design, reducing equipment R&D costs and complexity and improving the application flexibility of the 2N5157;
Reliability Exceeds Commercial Grade: Certified by the rigorous MIL-PRF-19500/371 military standard, the 2N5157 has a reliability improvement of more than 30% under conditions such as vibration, shock, and temperature cycling compared with ordinary commercial transistors, suitable for scenarios with high stability requirements;
Balanced Switching and Current Performance: The turn-on time (ton) of 0.8μs and turn-off time (toff) of 1.7μs ensure high-frequency switching performance. The 3.5Adc collector current can drive various loads, balancing switching speed and driving capability, adapting to high-frequency and high-power circuit design.
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