SS8050-H is a high-performance NPN general purpose amplifier transistor launched by Yangzhou Yangjie Electronic Technology Co., Ltd., featuring SOT-23 surface-mount package, fully compliant with RoHS requirements. The epoxy material meets UL-94 V-0 flammability rating, and halogen-free options are available (with suffix "HF"). With core advantages of high current gain, large collector current, and low saturation voltage drop, the product has an hFE value of 200-350 and a collector current of 1.5A, adapting to signal amplification, load driving and other scenarios. It is a universal core component in consumer electronics, industrial control, power management and other fields.
| Parameter Name | Specification Details |
|---|---|
| Transistor Type | NPN General Purpose Amplifier Transistor |
| Collector-Emitter Voltage (V_CEO) | Min.25V (I_C=100μA, I_B=0) |
| Collector-Base Voltage (V_CBO) | Min.40V (I_C=100μA, I_E=0) |
| Emitter-Base Voltage (V_EBO) | Min.5.0V (I_E=100μA, I_C=0) |
| Collector Current (I_C) | Max.1.5A |
| DC Current Gain (hFE) | At I_C=100mA, V_CE=1.0V: 200~350; At I_C=800mA, V_CE=1.0V: Min.40 |
| Saturation Voltage Drop | V_CE(sat)≤0.5V (I_C=800mA, I_B=80mA); V_BE(sat)≤1.2V (same condition) |
| Cut-off Current | I_CEO≤100nA (V_CE=20V); I_CBO≤100nA (V_CB=40V); I_EBO≤100nA (V_EB=5.0V) |
| Transition Frequency (f_T) | Min.100MHz (I_C=50mA, V_CE=10V, f=30MHz) |
| Collector Power Dissipation (P_C) | Max.300mW (T_A=25℃) |
| Operating Temperature Range | -55℃~+150℃ (Junction/Storage Temperature) |
| Package Type | SOT-23 (Surface Mount, Tin-plated leads, compliant with J-STD-002 and JESD22-B102) |
| Product Marking | Silkscreen "Y1" |
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| Package Model | Package Type | Package Dimensions (L×W×H, mm) | Pin Pitch (mm) | Packaging Specification |
|---|---|---|---|---|
| SS8050-H | SOT-23 | 2.8~3.0×1.2~1.4×0.9~1.15 | Typ.0.95 | 3000pcs/7-inch Reel, 30000pcs/Inner Box, 120000pcs/Outer Carton |