MRFE6VP5150NR1

suntopsemi
Manufacturer
NXP
Product Number
MRFE6VP5150NR1
Description
The MRFE6VP5150NR1 is a high ruggedness N-channel enhancement-mode lateral MOSFET launched by NXP Semiconductors, specifically designed for high-power RF amplification scenarios.
Inventory
65870
Datasheet
MRFE6VP5150NR1.pdf
Delivery
Payment
  • Product Overview

    The MRFE6VP5150NR1 is a high ruggedness N-channel enhancement-mode lateral MOSFET launched by NXP Semiconductors, specifically designed for high-power RF amplification scenarios. It operates in the frequency range of 1.8-600MHz with a 50V supply voltage, delivering 150W stable CW output power and 179W peak output in the FM band. Featuring unmatched input and output for broadband flexibility, this device integrates ESD protection and stability enhancement modules, combines extremely low thermal resistance and extreme VSWR tolerance, meets the stringent requirements of industrial, broadcast, and aerospace high-end scenarios, and serves as the core power component for high-power RF exciters and broadcast transmitters .

    Key Features

    • Ultra-Broadband Compatibility: Operating frequency covers 1.8-600MHz, with unmatched input and output design supporting flexible multi-band applications without additional custom matching circuits
    • Extreme VSWR Tolerance: Withstands >65:1 VSWR at all phase angles under 98MHz CW conditions, with no device degradation under 3dB overdrive input, adapting to complex antenna and load environments
    • Ultra-High Energy Efficiency: Achieves 74.6% drain efficiency in the 87.5-108MHz FM band, 72% efficiency in the 230MHz narrowband scenario, and maintains low power consumption even at 150W output
    • Excellent Thermal Performance: Junction-to-case thermal resistance is only 0.21℃/W, and thermal impedance is as low as 0.04℃/W under pulse conditions, greatly reducing the difficulty of heat dissipation design in high-power scenarios
    • High-Reliability Protection: Integrated ESD protection (2500V for human body model, 250V for machine model, 1200V for charge device model) and stability enhancement circuits, adapting to harsh high and low temperature working conditions (junction temperature operating range -40~+225℃)

    Technical Specifications

    Specification ParameterValue/Description
    Operating Frequency Range1.8-600MHz
    Typical Supply Voltage50Vdc
    Quiescent Drain Current (IDQ(A+B))100mA
    Output Power @230MHz CW150W
    Output Power @87.5-108MHz CW179W (min)/191W (typ)
    Power Gain @230MHz26.3dB (CW)/26.1dB (pulse)
    Power Gain @87.5-108MHz22.5dB
    Junction-to-Case Thermal Resistance (RθJC)0.21℃/W (CW)/0.04℃/W (pulse)
    Maximum Drain-Source Voltage (VDSS)-0.5~+133Vdc
    ESD Protection LevelHBM 2(2500V), MM B(250V), CDM IV(1200V)
    Package TypeTO-270WB-4 (4-lead wide-body package)
    Operating Junction Temperature Range-40~+225℃

    Typical Applications

    • Broadcast Transmitters: In the final-stage power module of 87.5-108MHz FM broadcast transmitters, MRFE6VP5150NR1 can achieve 179W stable output. The high drain efficiency of 74.6% reduces transmitter energy consumption, the >65:1 VSWR tolerance ensures continuous and stable operation of the transmitter in complex feeder environments, and the extremely low thermal resistance simplifies the heat dissipation system design of the transmitter.
    • Industrial RF Exciters: For laser/plasma RF exciters, the device's ultra-broadband coverage of 1.8-600MHz can adapt to multi-band excitation needs, the 150W high-power output meets the energy supply of industrial equipment, the extreme VSWR tolerance can cope with load mutation conditions, and the maximum junction temperature of 225℃ adapts to the high-temperature working environment of industry.
    • Aerospace RF Links: In the high-power RF front-end of aerospace communication and navigation, the 50V power supply is compatible with the airborne high-voltage power supply scheme, the integrated ESD protection and stability circuits improve the reliability of the equipment in complex electromagnetic environments, and the junction temperature range of -40~+225℃ can cover extreme temperature conditions at high and low altitudes.
    • Land Mobile Communication Base Stations: As the core of power amplification for land high-power mobile communication base stations, its 150W output power can meet the signal coverage requirements of long-distance communication, the efficiency above 72% reduces the operating cost of the base station, and the unmatched design shortens the R&D cycle of multi-band upgrading of the base station.

    Why Choose MRFE6VP5150NR1 ?

    • High Power & Reliability: 150W CW/179W FM high-power output, combined with >65:1 VSWR tolerance, provides power guarantee for high-end RF scenarios
    • Full-Scenario Compatibility: Covers 1.8-600MHz full frequency band, compatible with multiple signal types such as CW, pulse, analog/digital modulation, and adapts to multiple fields such as industry, broadcast, and aerospace
    • Low Heat Dissipation Cost: Ultra-low thermal resistance of 0.21℃/W reduces heat dissipation requirements by more than 30% compared with devices of the same power, reducing hardware investment in heat dissipation modules
    • Long-Life Stable Operation: Junction temperature operating range of -40~+225℃, integrated multiple protection circuits, MTTF (Mean Time To Failure) is far higher than conventional industry devices
    • Supply Chain Compatibility: 44mm width tape and 13-inch reel packaging with 500pcs per reel, meeting the mass production needs of high-power equipment

    SUNTOP COMPANY INTRODUCTION

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  • +
    1. What are the core performance data of MRFE6VP5150NR1 in the FM broadcast band? >
    Under 50Vdc, IDQ(A+B)=100mA and 1.5W input power conditions, the output power reaches 179W (min) in the 87.5-108MHz band, the power gain is 22.5dB, and the drain efficiency is 74.6%, providing high-fidelity and high-power signals for FM transmitters .
    +
    2. What is the specific VSWR tolerance performance of the device? >
    Under 98MHz CW conditions, 50Vdc supply and 3W (3dB overdrive) input, it can withstand >65:1 VSWR at all phase angles without performance degradation; it also has >65:1 VSWR tolerance under 230MHz pulse conditions, adapting to extreme load environments .
    +
    3. What is the significance of the device's thermal resistance parameters in high-power scenarios? >
    Its junction-to-case thermal resistance is only 0.21℃/W. At 150W CW output, if the case temperature is 80℃, the junction temperature of the device is 80+150×0.21=111.5℃, which is far lower than the maximum junction temperature of 225℃. Only conventional heat sinks can meet the heat dissipation requirements of 150W high power .
    +
    4. What is the ESD protection level of the device? >
    It can pass 2500V test for human body model (HBM, level 2), 250V test for machine model (MM, level B), and 1200V test for charge device model (CDM, level IV), which greatly improves the anti-static capability during assembly and use .
  • Packaging data

    Packaging Type Tape Width Reel Size Quantity per Reel Package Model
    Automated Tape & Reel 44mm 13-inch 500pcs TO-270WB-4
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