IRFP9240

suntopsemi
Manufacturer
minos
Product Number
IRFP9240
Description
The IRFP9240 is a high-performance P-channel power MOSFET manufactured by reputable vendors like Vishay
Inventory
23000
Datasheet
IRFP9240.pdf
Delivery
Payment
  • Product Overview

    The IRFP9240 is a high-performance P-channel power MOSFET manufactured by reputable vendors like Vishay, featuring a TO-247AC package with 200V voltage rating and 12A continuous drain current capability. Leveraging advanced planar technology, this device delivers low on-resistance and fast switching performance, making it ideal for medium-to-high voltage scenarios such as industrial control and power conversion. As a core power switching component balancing efficiency and reliability, complete parameters can be obtained from the IRFP9240 datasheet.

    Key Features

    • Ultra-Low Conduction Loss: Maximum on-resistance (Rds(on)) of only 0.5Ω at VGS=-10V, significantly reducing power loss (P=I²×R) under high current conditions.
    • Wide Voltage & High Current Adaptability200V drain-source voltage (Vds) covers 12V-48V systems, with -12A continuous current and 48A pulse current (Idm) for dynamic loads.
    • High-Reliability Package: TO-247AC package with isolated mounting hole and wide creepage distance meets industrial safety standards; wide operating temperature range of -55°C to 150°C adapts to harsh environments.
    • Fast Switching Performance: Low gate charge (Qg) of 44nC and switching time of 100-200ns support applications below 100kHz, simplifying drive circuit design.
    • Eco-Compliant Design: Complies with RoHS Directive 2002/95/EC, with repetitive avalanche rating and dynamic dv/dt rating for inductive load scenarios.

    Technical Specifications

    ParameterValue/SpecificationTest ConditionReference
    Transistor TypeP-Channel Enhancement MOSFET-superscript:2superscript:3
    Drain-Source Voltage (Vds)-200V (Max)25°Csuperscript:1superscript:6
    Continuous Drain Current (Id)-12ATc=25°Csuperscript:3superscript:6
    Pulse Drain Current (Idm)48APulse Width ≤10μssuperscript:1
    On-Resistance (Rds(on))0.5Ω (Max)Vgs=-10V, Id=-7.2Asuperscript:3superscript:5
    Gate-Source Voltage (Vgs)±20V (Max)-superscript:1superscript:6
    Gate Charge (Qg)44nC (Max)Vgs=10V, Vds=25Vsuperscript:3superscript:6
    Power Dissipation (Pd)150WTc=25°Csuperscript:1superscript:3
    Junction Temp Range (Tj)-55°C ~ +150°C-superscript:3superscript:7
    Package TypeTO-247AC (Through-Hole)-superscript:5superscript:8
    Input Capacitance (Ciss)1200pF (Max)Vds=25Vsuperscript:3superscript:6

    Typical Applications

    • DC-DC Converter Synchronous Rectification: As a synchronous rectifier in 50W-150W Buck/Flyback converters, the IRFP9240 eliminates the need for a bootstrap circuit, adapting to 48V input/24V output scenarios and improving efficiency by 2%-5%. It is a core scenario for IRFP9240 power applications.
    • Battery Management System (BMS): Serves as a high-side switch in 48V energy storage battery charge-discharge circuits. 200V voltage rating withstands overvoltage surges, 12A current meets 1C discharge requirements for 10Ah batteries, and low loss extends runtime.
    • Small Motor Drive: Acts as a low-side switch in H-bridge circuits for drone servos and small pumps. -2V~-4V threshold voltage supports direct MCU driving, and avalanche capability absorbs motor back EMF to protect circuits.
    • Industrial Load Switching: Adapts to 24V/48V industrial buses to control time-sharing power supply for sensors and actuators. 100ns-level switching speed and 12A current meet most industrial load needs, with TO-247 package facilitating thermal design.
    • Audio Amplifiers: Low on-resistance reduces signal loss and improves sound quality, making it a preferred IRFP9240 MOSFET for power amplification modules in audio equipment.

    Why Choose IRFP9240 ?

    • Lower Energy Loss: 0.5Ω maximum on-resistance reduces loss by over 30% compared to competitors (above 0.3Ω) in the same voltage class, suitable for energy-sensitive scenarios.
    • Strong Environmental Adaptability: -55°C to 150°C wide temperature range and 200V voltage rating cover harsh requirements in industrial and automotive fields, with higher reliability than standard MOSFETs.
    • Simplified Design Process: Low gate charge supports low-cost totem-pole driving; the isolated mounting hole of the TO-247 package simplifies thermal layout and shortens R&D cycles.
    • Cost-Effective Option: Combines Infineon IR series technology and Vishay mass production advantages, with lower prices than imported devices of the same performance for better bulk procurement costs.
    • Flexible Scalability: Supports parallel connection of multiple devices to increase current capacity to dozens of amperes, adapting to high-power equipment upgrades.

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  • +
    1. What is the maximum voltage rating of the IRFP9240? >
    The maximum drain-source voltage (Vds) of the IRFP9240 is 200V, safely adapting to 12V-48V systems. Transient overvoltage can be absorbed via avalanche characteristics but must be controlled below 200V to avoid damage.
    +
    2. What is the typical on-resistance of this MOSFET? >
    At Vgs=-10V and Id=-7.2A, the maximum Rds(on) is 0.5Ω with a typical value as low as 0.34Ω, effectively reducing power loss (approximately 72W) at 12A current.
    +
    3. What is the maximum power dissipation capability of the IRFP9240? >
    Maximum power dissipation reaches 150W at a case temperature of 25°C, decreasing to 0 at 150°C. Heat sinks are required in practical applications to ensure junction temperature does not exceed the limit.
    +
    4. What gate voltage is required to drive the IRFP9240? >
    A gate drive voltage of -10V is recommended for minimum on-resistance; the threshold voltage ranges from -2V to -4V, with a minimum of -4V required to turn on the device.
  • Packaging data

    Specification Category Detailed Parameters Remarks
    Electrical Parameters 200V/-12A/-0.5Ω/150W Core performance indicators
    Package Specifications TO-247AC, 3 pins, 5.45mm pitch Through-hole mounting, isolated heat dissipation
    Environmental Parameters -55°C~150°C Tj, RoHS compliant Industrial-grade environmental adaptability
    Driving Parameters ±20V gate voltage, 44nC Qg Low driving loss
    Protection Features Repetitive avalanche rating, dynamic dv/dt tolerance Suitable for inductive loads
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