Product Overview

FS8205A is a high-performance N-Channel Enhancement Mode MOSFET manufactured with advanced trench process technology, designed specifically for low-power, high-current applications. This product features a 20V drain-source breakdown voltage (V(BR)DSS), 6A continuous drain current (ID), and ultra-low on-resistance (maximum RDS(on) of 25mΩ @ 4.5V and 32mΩ @ 2.5V). Equipped with a compact SOT-23-6L package, it effectively saves PCB space and is widely used in battery protection and various switching applications. As a core model in the FS8205A series, it maintains stable performance over a wide temperature range of -55~+150℃, meeting the requirements of smartphones, power banks, DC-DC converters and other devices for high-efficiency semiconductors. It is a cost-effective FS8205A MOSFET solution that balances performance and cost.

Key Features

• Advanced Trench Process Technology: Adopts industry-leading trench process to enhance the current-carrying capacity and switching response speed of FS8205A, laying a core foundation for low-power operation and reducing dynamic circuit losses.
• Ultra-Low On-Resistance (RDS(on)): At VGS=4.5V, the maximum RDS(on) is only 25mΩ; at VGS=2.5V, the maximum RDS(on) is 32mΩ, which significantly reduces the power loss of FS8205A during the conduction phase and improves overall circuit efficiency.
• High Current-Carrying Capacity: Supports 6A continuous drain current (ID) and 25A pulsed drain current (IDM), capable of handling medium-to-high current load scenarios, adapting to various power requirements, and expanding the application range of FS8205A.
• Compact SOT-23-6L Package: The maximum package size is only 3.02mm (D) × 2.95mm (E), which significantly reduces PCB footprint and helps FS8205A adapt to the design of miniaturized and thin electronic devices.
• Reliable Dynamic and Diode Characteristics: The typical input capacitance (Ciss) is 800pF, with short switching delay times (td(on)=13ns, td(off)=18ns); the maximum forward voltage (VDS) of the source-drain diode is 1.2V @ IS=4A, ensuring stable operation of FS8205A in complex circuits.

Technical Specifications

Typical Applications

• Battery Protection Scenario: With ultra-low on-resistance and high current-carrying capacity, FS8205A is a core component in lithium battery and polymer battery protection circuits. When the battery is overcharged, over-discharged, or overcurrent, FS8205A can respond quickly and turn on/off stably. Its source-drain diode forward voltage of 1.2V @ 4A reduces additional losses in the protection circuit, ensuring battery safety and service life. It is widely used in FS8205A battery protection modules of smartphones, tablets, portable power banks and other devices.
• Switching Application Scenario: Suitable for switching circuits such as DC-DC converters, load switches, and small motor drives. The excellent dynamic characteristics of FS8205A (td(on)=13ns, td(off)=18ns) enable fast switching actions, reducing switching losses; the combination of 800pF input capacitance and low on-resistance improves circuit power density, adapting to FS8205A switching modules of laptops, smart home devices, small home appliances and other products.

Why Choose FS8205A ?

• Ultra-Low Conduction Loss, Significant Energy-Saving Advantage: The maximum RDS(on) is only 25mΩ @ 4.5V. Compared with similar MOSFETs, FS8205A can reduce conduction loss by more than 30%, making it especially suitable for power-sensitive portable devices and meeting green energy-saving requirements.
• Wide Voltage and Current Adaptability, Strong Compatibility: Supports 20V drain-source voltage (VDS), 6A continuous drain current (ID), and 25A pulsed drain current (IDM). FS8205A can adapt to various medium-low voltage and medium-high current scenarios, reducing the complexity of device selection.
• Stable at Extreme Temperatures, High Reliability: Both junction temperature (TJ) and storage temperature (TSTG) range from -55℃ to +150℃. FS8205A can work stably in high-temperature industrial environments or low-temperature outdoor scenarios, improving the long-term operation reliability of equipment.
• Miniaturized Package, High Space Utilization: Adopting SOT-23-6L package, the PCB footprint of FS8205A is 60% smaller than that of traditional TO-252 packages, helping electronic devices develop towards thinness and high-density layout.
• Comprehensive Protection Mechanism, Safer Circuit: The maximum forward voltage (VDS) of the source-drain diode is 1.2V @ 4.0A, providing reliable reverse protection for the circuit; the low parasitic capacitance design reduces EMI interference, and FS8205A can lower the risk of circuit failure.

SUNTOP COMPANY INTRODUCTION

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