The CUS520.H3F(T is a silicon epitaxial Schottky barrier diode from Toshiba, optimized for high-speed switching applications. Housed in a USC package (equivalent to SOD-323 and SC-76), it features low reverse current (IR(2)=5µA max) and low forward voltage, supporting 30V reverse voltage and 300mA peak forward current. Ideal for high-frequency circuits, power rectification, and signal modulation, its compact design and wide temperature range (-40°C to 100°C) make it suitable for consumer and industrial electronics.
Parameter | Value | Unit | Description |
---|---|---|---|
Package Type | USC (SOD-323/SC-76 equivalent) | - | Pins: 1-Cathode, 2-Anode |
Reverse Voltage (VR) | 30 | V | Maximum continuous reverse voltage |
Peak Forward Current (IFM) | 300 | mA | Peak operating current |
Average Rectified Current (IO) | 200 | mA | Continuous operating current |
Power Dissipation (PD) | 150 | mW | Typical on 20mm×20mm PCB |
Junction Temperature (Tj) | 125 | °C | Maximum operating temperature |
Total Capacitance (Ct) | 17 | pF | At 0V reverse, 1MHz frequency |
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Model | Package | Pins | Packaging | Weight (typ.) | Notes |
---|---|---|---|---|---|
CUS520.H3F(T | USC | 2 | Tape & Reel | 4.5mg | SMD, 0.65mm pin pitch |