AFT05MS004NT1

suntopsemi
Manufacturer
NXP
Product Number
AFT05MS004NT1
Description
The AFT05MS004NT1 is a high ruggedness N-channel enhancement-mode lateral MOSFET launched by NXP Semiconductors, specifically designed for handheld two-way radio applications.
Inventory
68700
Datasheet
AFT05MS004NT1.pdf
Delivery
Payment
  • Product Overview

    The AFT05MS004NT1 is a high ruggedness N-channel enhancement-mode lateral MOSFET launched by NXP Semiconductors, specifically designed for handheld two-way radio applications. It operates in the frequency range of 136-941MHz with a 7.5V low-voltage supply and delivers stable output power above 4W. Featuring high gain, ultra-high drain efficiency and extreme VSWR tolerance, this device integrates ESD protection and stability enhancement modules, adopts SOT-89 package, and is suitable for power amplification requirements of VHF/UHF band handheld wireless devices, serving as the core power component for portable RF communication terminals .

    Key Features

    • Broadband Compatibility: Operating frequency covers 136-941MHz, supporting full-band VHF/UHF handheld radios without the need for frequency-specific component selection
    • Ultra-High Energy Efficiency: Drain efficiency reaches 74.9% in 520MHz narrowband scenarios and remains above 61.8% in 136-174MHz broadband scenarios, significantly reducing device power consumption
    • Extreme VSWR Tolerance: Withstands >65:1 VSWR at all phase angles in 435MHz band, with no device degradation under 3dB overdrive input, adapting to complex antenna matching environments
    • Integrated Protection Design: Built-in ESD protection (1000V for human body model, 2000V for charge device model) and stability enhancement circuits, improving overall equipment reliability
    • Low-Voltage Adaptation: Supports 7.5V low-voltage power supply, perfectly matching battery-powered handheld devices, and has excellent thermal performance (junction-to-case thermal resistance is only 4.4℃/W)

    Technical Specifications

    Specification ParameterValue/Description
    Operating Frequency Range136-941MHz
    Typical Supply Voltage7.5Vdc
    Quiescent Drain Current (IDQ)100mA (520MHz narrowband)/50mA (UHF broadband)
    Output Power @520MHz Narrowband4.9W CW
    Output Power @136-174MHz Broadband6.1W CW
    Power Gain @520MHz20.9dB
    Drain Efficiency @520MHz74.9%
    Junction-to-Case Thermal Resistance (RθJC)4.4℃/W
    Maximum Drain-Source Voltage (VDSS)-0.5~+30Vdc
    ESD Protection LevelHBM 1C(1000V), CDM IV(2000V)
    Package TypeSOT-89 (3 pins)
    Packaging Form12mm width tape, 7-inch reel

    Typical Applications

    • VHF Band Handheld Two-Way Radios: In the final-stage power amplification module of 136-174MHz VHF handheld radios, AFT05MS004NT1 can achieve 6W CW output power. The 17.8dB power gain reduces the pressure on the front-stage driver, the drain efficiency above 61.8% extends device battery life, and the >65:1 VSWR tolerance ensures communication stability in complex environments.
    • UHF Band Portable Communication Terminals: For 350-520MHz UHF handheld devices, this device can maintain drain efficiency above 49.4% at 4W output power. The low thermal resistance of 4.4℃/W simplifies device heat dissipation design, and the integrated stability circuit avoids self-excitation risks during broadband operation, suitable for police and civilian UHF communication terminals.
    • 700-800MHz Handheld Device Power Stage: In 700-800MHz band handheld communication devices, its broadband coverage eliminates the need for additional adaptive components, the low-voltage power supply characteristic matches the device lithium battery solution, and the extreme VSWR tolerance can cope with sudden situations such as device drops and poor antenna contact, ensuring uninterrupted communication links.
    • 10-1000MHz RF Driver Stage: It can be used as a driver-stage device for 10-1000MHz medium and high-power RF systems. The high-gain characteristic reduces the power requirement for the front-stage signal source, the integrated ESD protection improves the yield of production line assembly, and the broadband impedance characteristic simplifies the design of multi-band matching circuits.

    Why Choose AFT05MS004NT1 ?

    • Low Power Consumption & Long Battery Life: The ultra-high drain efficiency of 74.9% reduces power consumption by more than 20% compared with similar devices, significantly extending the battery life of handheld devices
    • Superior Environmental Adaptability: >65:1 VSWR tolerance at all phase angles, far exceeding the industry's conventional 5:1 threshold, and can cope with extreme working conditions such as antenna short circuits and poor contact
    • Broadband No-Selection: Full-band coverage of 136-941MHz, supporting VHF/UHF/700-800MHz bands at the same time, reducing the cost of multi-model material management
    • Portable Device Compatibility: 7.5V low-voltage power supply perfectly matches the lithium battery of handheld devices, and the small SOT-89 package meets the lightweight and miniaturized design requirements of terminal equipment
    • High Reliability Guarantee: Integrated ESD protection and stability enhancement circuits, with a junction temperature operating range of -40~+150℃, adapting to harsh high and low temperature working environments

    SUNTOP COMPANY INTRODUCTION

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  • +
    1. What are the core performance data of AFT05MS004NT1 at 520MHz? >
    Under 7.5Vdc, IDQ=100mA and 16dBm input power conditions, the output power reaches 4.9W CW, the power gain is 20.9dB, and the drain efficiency is as high as 74.9%, which is the energy efficiency benchmark among devices of the same voltage level .
    +
    2. What is the specific VSWR tolerance performance of the device? >
    At 435MHz band, 9Vdc supply and 0.24W (3dB overdrive) input, it can withstand >65:1 VSWR at all phase angles without device performance degradation; it can also withstand >65:1 VSWR at 155MHz band, adapting to complex antenna environments .
    +
    3. What is the impact of the thermal resistance parameter of AFT05MS004NT1 on heat dissipation design? >
    The junction-to-case thermal resistance of the device is only 4.4℃/W. At 4W CW output, if the case temperature is 79℃, the junction temperature of the device is 79+4×4.4=96.6℃, which is far lower than the maximum junction temperature of 150℃. Only a simple heat sink is required for handheld devices to meet the heat dissipation requirements .
    +
    4. What is the ESD protection level of the device? >
    It can pass 1000V test for human body model (HBM, level 1C), 100V test for machine model (MM, level A), and 2000V test for charge device model (CDM, level IV), which greatly improves the anti-static capability during assembly and use .
  • Packaging data

    Packaging Type Tape Width Reel Size Quantity per Reel Package Model
    Automated Tape & Reel 12mm 7-inch 1000pcs SOT-89
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