The 2SA1162-GR,LF(T is a silicon PNP epitaxial bipolar transistor (PCT process) from Toshiba, designed for general-purpose audio frequency amplification. It features high voltage (VCEO=-50V) and high current (IC=-150mA) capabilities, combined with excellent hFE linearity /hFE(I_C=-0.1mA)/hFE(IC=-2mA)=0.95typ.) and low noise performance (NF=1dB typ.). Housed in a compact TO-236MOD package (0.012g weight), it is ideal for audio amplification, signal processing, and general-purpose amplification circuits.
Parameter | Value | Unit | Description |
---|---|---|---|
Package Type | TO-236MOD (SC-59) | - | Pins: 1-Base, 2-Emitter, 3-Collector |
Voltage Rating | -50 | V | VCBO/VCEO (reverse) |
Current Rating | -150/-30 | mA | IC/IB (reverse) |
Power Dissipation | 150 | mW | PC |
Temperature Range | -55~125 | °C | Junction/storage temperature |
hFE (GR Grade) | 200~400 | - | VCE=-6V, IC=-2mA |
Noise Figure (NF) | 1~10 | dB | f=1kHz, Rg=10kΩ |
Transition Frequency | ≥80 | MHz | fT |
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Model | Package | Pins | Packaging | Weight (typ.) | Notes |
---|---|---|---|---|---|
2SA1162-GR,LF(T | TO-236MOD | 3 | Tape & Reel | 0.012g | SMD, 1.27mm pin pitch |