2SA1162-GR,LF(T

Manufacturer
TOSHIBA
Product Number
2SA1
Description
The 2SA1162-GR,LF(T is a silicon PNP epitaxial bipolar transistor (PCT process) from Toshiba, designed for general-purpose audio frequency amplification.
Inventory
33220
Datasheet
2SA1162-GR,LF(T.pdf
Delivery
Payment
  • Product Overview

    The 2SA1162-GR,LF(T is a silicon PNP epitaxial bipolar transistor (PCT process) from Toshiba, designed for general-purpose audio frequency amplification. It features high voltage (VCEO=-50V) and high current (IC=-150mA) capabilities, combined with excellent hFE linearity /hFE(I_C=-0.1mA)/hFE(IC=-2mA)=0.95typ.) and low noise performance (NF=1dB typ.). Housed in a compact TO-236MOD package (0.012g weight), it is ideal for audio amplification, signal processing, and general-purpose amplification circuits.

    Key Features

    • High Voltage & Current Handling: Supports \(V_{CEO}=-50V\) and \(I_C=-150mA\) (max), suitable for high-power amplification tasks.
      Superior hFE Linearity: Maintains consistent hFE across current ranges, with a typical linearity of 0.95 for low-distortion signal amplification.
      High DC Current Gain: hFE ranges from 70~400 (GR grade: 200~400), enabling wide dynamic range amplification.
      Low Noise Figure: NF as low as 1dB (typ.) makes it suitable for high-fidelity audio and sensitive signal processing.
      Compact Package Design: TO-236MOD (SC-59) package ensures space-saving surface mounting for dense PCB layouts.

    Technical Specifications

    ParameterValueUnitDescription
    Package TypeTO-236MOD (SC-59)-Pins: 1-Base, 2-Emitter, 3-Collector
    Voltage Rating-50VVCBO/VCEO (reverse)
    Current Rating-150/-30mAIC/IB (reverse)
    Power Dissipation150mWPC
    Temperature Range-55~125°CJunction/storage temperature
    hFE (GR Grade)200~400-VCE=-6V, IC=-2mA
    Noise Figure (NF)1~10dBf=1kHz, Rg=10kΩ
    Transition Frequency≥80MHzfT

    Typical Applications

    • Audio Amplification: Ideal for audio systems and microphone preamps, offering low noise (1dB typ.) and high hFE linearity for pure sound reproduction.
    • General Signal Amplification: Suits industrial instrumentation and consumer electronics for signal conditioning, supporting wide voltage/current inputs.
    • Complementary Symmetry Circuits: Pairs with 2SC2712 (NPN) to form push-pull amplifiers, suitable for power amplification and voltage regulation.

    Why Choose 2SA1162-GR,LF(T?

    • Hi-Fi Audio Performance: 1dB typical noise and 0.95 hFE linearity meet strict requirements for low-distortion audio applications.
    • Wide Operational Range: -50V voltage and -150mA current capability reduce the need for (multi-stage amplification).
    • Space-Saving Design: TO-236MOD package is 50% smaller than traditional designs, optimizing space in portable devices.
    • Reliable Thermal Stability: Epitaxial (PCT) process ensures stable operation across -55~125°C, suitable for harsh environments.
    • Flexible Gain Options: Multiple hFE grades (O/Y/GR) allow customization, with GR grade (200~400) for high-gain precision amplifiers.

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  • +
    1. What is the maximum collector current of 2SA1162-GR,LF(T? >
    The maximum collector current IC is -150mA, suitable for high-current amplification tasks.
    +
    2. What is the hFE range for GR grade? >
    The GR grade offers an hFE range of 200~400, ideal for circuits requiring high DC gain.
    +
    3. What is the minimum noise figure (NF) of this transistor? >
    The typical noise figure is 1dB, making it suitable for low-noise audio applications at 1kHz.
    +
    4. What is the maximum junction temperature allowed? >
    The maximum junction temperature Tj is 125°C, ensuring reliability in high-temperature environments.
  • Packaging data

    Model Package Pins Packaging Weight (typ.) Notes
    2SA1162-GR,LF(T TO-236MOD 3 Tape & Reel 0.012g SMD, 1.27mm pin pitch

     

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