Product Overview

The RN1107MFV,L3F(CT is a silicon NPN bipolar transistor with built-in bias resistors from Toshiba, utilizing epitaxial technology (PCT process). It integrates base and emitter bias resistors (R1=10kΩ, R2=47kΩ) to simplify peripheral circuit design. With its ultra-small VESM package, it enables high-density surface mounting, while the AEC-Q101 automotive qualification ensures reliability in harsh environments. Ideal for switching, driver, and interface circuits in automotive, industrial, and consumer electronics.

Key Features

• AEC-Q101 Automotive Qualified: Meets automotive reliability standards, suitable for engine control and body electronics in demanding environments.
• Ultra-Compact VESM Package: Measures only 1.2mm×0.32mm, supporting high-density PCB mounting and space-saving designs.
• Integrated Bias Resistors: On-chip R1 (10kΩ) and R2 (47kΩ) reduce external components, cutting system cost and assembly time.
• Versatile Resistance Options: Offers multiple resistor combinations (e.g., RN1108MFV/RN1109MFV) for flexible circuit design adaptability.
• Complementary Model Support: Pairs with RN2107MFV to RN2109MFV series for symmetrical or dual-supply circuit designs.

Technical Specifications

Typical Applications

• Switching Circuits: Suitable for power switches and signal routers, leveraging built-in resistors for fast biasing and stable switching performance.
• Inverter Circuits: Functions as a power switch in DC-AC inverters, supporting high-frequency operation and minimizing external components for efficiency.
• Interface Circuits: Enables level conversion and signal isolation in interface designs, compatible with diverse voltage domains for reliable signal transmission.
• Driver Circuits: Drives loads like LEDs and relays, with integrated resistors simplifying driver stage design for consumer and industrial devices.

Why Choose RN1107MFV,L3F(CT?

• Automotive-Grade Reliability: AEC-Q101 certification ensures robustness in high-temperature, vibration-prone automotive environments.
  Space-Saving Design: The VESM package’s compact size (1/3 of traditional packages) enables miniaturization in wearables and compact electronics.
  Cost-Effective Solution: Integrated bias resistors reduce component count and soldering steps, lowering BOM costs and accelerating development.
  Design Flexibility: Multiple resistance values and complementary models accommodate custom gain and power requirements for versatile applications.
  Low Power, High Efficiency: Low saturation voltage (V_CE(sat)≤0.3V) and high current gain (\(h_{FE}≥80\)) balance energy efficiency and driving capability.

SUNTOP COMPANY INTRODUCTION

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